M24L416256DA ram equivalent, 4-mbit (256k x 16) pseudo static ram.
* Advanced low-power architecture
*High speed: 55 ns, 60 ns and 70 ns
*Wide voltage range: 2.7V to 3.6V
*Typical active current: 1 mA @ f = 1 MHz
*Low.
such as cellular telephones. The device can be put into standby mode
Elite Semiconductor Memory Technology Inc.
Public.
of read and write modes.
Functional Description
The M24L416256DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to .
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